tli-series (three level inverter) igbt 400 amperes/600 volts cm400ye2n-12f / CM400YE2P-12F 1 08/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: the tli-series has been designed for three level (neutral point clamped) topologies in applications requiring high efficiency operation and improved output waveform quality. they also provide signifi - cant benefits in applications where low output noise using small filter components is required or where long motor leads create standing wave ratio (swr) voltage surge issues. features: smaller output voltage steps reducing surge voltage low output ripple current lower modulation frequency with same quality output waveform applications: three level inverter topologies solar power inverters high efficiency ups long motor lead applications cm400ye2n-12f CM400YE2P-12F ordering information: example: select the complete module number you desire from the table - i.e. cm400ye2n-12f and CM400YE2P-12F are 600v (v ces ), 400 ampere tli-series igbt power modules. current rating v ces type amperes volts (x 50) cm 400 12 outline drawing and circuit diagram dim. inches millimeters r 0.20 5.1 s 0.14 min. 3.6 min. t 0.22 dia. 5.6 dia. u m6 metric m6 v m4 metric m4 w 1.38+0.04/-0.02 35.0+1.0/-0.5 x 1.18 +0.04/-0.02 30.0 +1.0/-0.5 y 0.43 11.0 z 0.06 1.5 aa 0.16 4.0 ab 0.09 2.35 ac 0.67 17.0 ad 0.55 14.0 ae 0.45 11.4 af 0.35 9.0 dim. inches millimeters a 4.33 110.0 b 3.15 80.0 c 0.87 22.0 d 3.740.01 95.00.25 e 2.600.01 66.00.25 f 2.01 51.0 g 1.50 38.0 h 0.72 18.3 j 0.20 5.0 k 0.28 7.0 l 0.12 3.0 m 0.31 8.0 n 0.83 21.0 p 1.02 26.0 q 0.54 13.7 rtc g1 e1 c1 g2 e2 e2 ak e1 c2 cm300ye2p-12f rtc g2 e2 g1 e1 c1 e2 cm300ye2n-12f ak e1 c2 m n p p n h g f d a c x w e q b ac ad af ae s r l k t u v j ab aa z y g1 e1 c2 c1 ak e2 e1 e2 g2
2 cm400ye2n-12f / CM400YE2P-12F tli-series (three level inverter) igbt 400 amperes/600 volts 08/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol cm400ye2n-12f / CM400YE2P-12F units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, main terminals (c1, ak, e2), m8 screw (max.) C 40 in-lb mounting torque, mounting holes, m5 screw (max.) C 30 in-lb mounting torque, c2, e1 terminals, m4 screw (max.) C 15 in-lb weight (typical) C 530 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 v rms inverter part collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current dc (t c = 25c) i c 400 amperes peak collector current (pulse) *2 i cm 800 amperes emitter current (t c = 25c) i e *1 400 amperes peak emitter current (pulse) *2 i em *1 800 amperes maximum collector dissipation (t c ' = 25c) p c *3 1250 watts clamp diode part repetitive peak reverae voltage v rrm 600 volts forward current (t c = 25c) i fm 400 amperes *1 i e , i em , v ec , t rr , and q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *3 junction temperature (t j ) should not increase beyond 150c.
3 cm400ye2n-12f / CM400YE2P-12F tli-series (three level inverter) igbt 400 amperes/600 volts 08/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units inverter part collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v C C 40 a collector-emitter saturation voltage v ce(sat) i c = 400a, v ge = 15v, t j = 25c C 1.6 2.2 volts i c = 400a, v ge = 15v, t j = 125c C 1.6 C volts input capacitance c ies C C 110 nf output capacitance c oes v ce = 10v, v ge = 0v C C 7.2 nf reverse transfer capacitance c res C C 4 nf total gate charge q g v cc = 300v, i c = 400a, v ge = 15v C 2480 C nc turn-on delay time t d(on) v cc = 300v, i c = 400a, C C 700 ns turn-on rise time t r v ge1 = v ge2 = 15v, C C 400 ns turn-off delay time t d(off) r g = 4.7 , C C 1100 ns turn-off fall time t f inductive load switching operation, C C 300 ns reverse recovery time t rr *1 i e = 400a C C 200 ns reverse recovery charge q rr *1 C 2.6 C c emitter-collector voltage v ec *1 i e = 400a, v ge = 0v C C 2.8 volts external gate resistance r g 4.7 C 16 clamp diode part repetitive reverse current i rrm v r = v rrm C C 1 ma forward voltage drop v fm i f = 400a C C 2.8 volts reverse recovery time t rr i f = 400a, v cc = 300v, C C 200 ns reverse recovery charge q rr v ge1 = v ge2 = 15v, r g = 4.7 , C 2.6 C c inductive load switching operation thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *4 r th(j-c') q inverter igbt C C 0.11 c/w thermal resistance, junction to case *4 r th(j-c') d inverter fwdi C C 0.14 c/w thermal resistance, junction to case *4 r th(c-f) d clamp diode part C C 0.14 c/w contact thermal resistance *5 r th(c-f) thermal grease applied (per 1 module) C 0.037 C c/w * 4 t c measured point is just under the chips. if using this value, r th(f-a) should be measured just under the chips. *5 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)].
4 cm400ye2n-12f / CM400YE2P-12F tli-series (three level inverter) igbt 400 amperes/600 volts 08/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 1 0.5 1.0 1.5 3.0 3.5 2.0 2.5 4.0 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 3 10 2 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 5 6 8 10 14 12 16 18 22 20 4 3 2 1 0 t j = 25c forward voltage, v f , (volts) clamp diode forward characteristics (inverter part - typical) forward current, i f , (amperes) v ge = 0v c ies c oes c res i c = 800a i c = 400a i c = 160a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 1 2 3 4 0 10 9 9.5 8 8.5 7.5 t j = 25 c 0.5 1.0 1.5 3.0 3.5 2.0 2.5 4.0 10 0 10 1 10 3 10 2 t j = 25 c 800 200 400 600 0 200 400 600 800 0 3.0 1.0 1.5 0.5 2.0 2.5 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load t f 10 3 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 4000 3000 2000 1000 v cc = 300v v cc = 200v i c = 400a 11 15 v ge = 20v v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load e sw(on) e sw(off) collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 3 switching loss vs. collector current (inverter part - typical) t j = 25 c
5 cm400ye2n-12f / CM400YE2P-12F tli-series (three level inverter) igbt 400 amperes/600 volts 08/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c') = 0.1c/w (igbt) r th(j-c') = 0.14c/w (fwdi) r th(j-c) = 0.14c/w (clamp diode) normalized transient thermal impedance, z th(j-c') forward current, i f , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load 10 3 reverse recovery switching loss vs. forward current (clamp diode part - typical)
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